Control of spin injection by direct current in lateral spin valves

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Control of spin injection by direct current in lateral spin valves

The spin injection and accumulation in metallic lateral spin valves with transparent interfaces are studied using dc injection current. Unlike ac-based techniques, this allows the investigation of the effects of the direction and magnitude of the injected current. We find that the spin accumulation is reversed by changing the direction of the injected current, whereas its magnitude does not cha...

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Large-amplitude coherent spin waves excited by spin-polarized current in nanoscale spin valves

We present spectral measurements of spin-wave excitations driven by direct spin-polarized current in a free layer of nanoscale Ir20Mn80/Ni80Fe20/Cu/Ni80Fe20 spin valves. The measurements reveal that large-amplitude coherent spin-wave modes are excited over a wide range of bias current. The frequency of these excitations exhibits a series of jumps as a function of current due to transitions betw...

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Alternating spin-polarized current induces parametric resonance in spin valves

Marcel G. Clerc,1 Saliya Coulibaly,2 David Laroze,3,4 Alejandro O. León,1 and Álvaro S. Núñez1 1Departamento de Fı́sica, Facultad de Ciencias Fı́sicas y Matemáticas, Universidad de Chile, Casilla 487-3, Santiago, Chile 2Laboratoire de Physique des Lasers, Atomes et Molécules, Centre National de la Recherche Scientifique, Unités Mixtes de Recherche 8523, Université des Sciences et Technologies de ...

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Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves.

The non-local spin injection in lateral spin valves is strongly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin-valve voltage, which determines the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 μV. Here we show that lateral spin valves with low-resistivity NiF...

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Lateral spin injection in germanium nanowires.

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 sa...

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2009

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.79.184415